Ge Substrate: (100) 10x5 x 0.5 mm , 1SP, P type Ga doped,R:1-5 ohm.cm Ba0.5Sr0.5TiO3 Customers Who Bought This Item

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Ge Substrate: (100) 10x5 x 0.5 mm , 1SP, P type Ga doped,R:1-5 ohm.cm Ba0.5Sr0.5TiO3 Customers Who Bought This ItemGe Wafer Specification Growing Method: CZ Wafer Size: 10 x 5 x0. 5 mm Surface Polishing: one side epi polished Orientation: (100) Surface roughness: RMS or Ra:~ 10 A(By AFM) Doping: Ga doped Conductor type: P type Resistivity: 1 5 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room in wafer container Related Product Other Crystal wafer