Ge Substrate (111) 10x10x 0.5 mm, 2 SP, Sb-doped, 0.005-0.01 Ohm.cm - GESbc101005S2R0005 Coated Electrode This system provides most applications

This system provides most applications in battery and supercapacitor testing fields such as electrode materials research

Working Temperature:    < 50°C

Polishing:                 two side polished

Power Extension One extension socket (Max power 1500W) is installed in the glove box main chamber

Crystal Purity: >99

Ge Substrate (111) 10x10x 0.5 mm, 2 SP, Sb-doped, 0.005-0.01 Ohm.cm - GESbc101005S2R0005 Coated Electrode This system provides most applicationsSpecifications Growing Method: CZ Wafer Size: 10x10x0. 5 mm Surface Polishing: Two sides epi polished Orientation: (111) Surface roughness: < 8 A ( by AFM) Doping: Sb doped Conductor type: N type Resistivity: 0. 005 0. 01 Ohms cm EPD: N A Package: under 1000 class clean room in wafer container Related Product Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater