GaAs - Growing Method: VGF (100) Si doped, N-type, 2" dia x 0.35mm, 2sp Orientation 10-14

GaAs - Growing Method: VGF (100) Si doped, N-type, 2" dia x 0.35mm, 2sp Orientation 10-14GaAs single crystal wafer Growing Method: VGF Orientation: (100) Size: 2" dia x 0. 35 mm Polishing: Two sides polished Doping: Si doped Conductor type: N type Carrier Concentration: (1. 60 3. 94) E18 cm^3 Mobility: (1400 2100) cm^2 V. S Resistivity: (1. 08 1. 90) E 3 ohm. cm EPD: < 500cm^2 Ra(Average Roughness) : < 0. 4 nm EPI ready surface and packing Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces

The compact flow meters are ideal for MTI oven EQ-DZF-6020 Series

polymer Li-Ion battery made by heated sealer               make pouch cell

Surface Quality: 80/50

Orientation:                   (100)

Surface finish:  One side optical polished < 100A

Thermocouple is not included

Oxygen free copper gasket for high vacuum sealing of OTF-1200X-HVHP-80

Packing:   in 100 class plastic bag in 1000 class clean room

Warning: For liability considerations

The permanent magnet is used held ring cutting die and easy to replace

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they are generally not used in dynamic applications