LaAlO3,(100) orn. 1"x 1" x 0.5mm substrate, 1 side epi polished - LAOa252505S1 Thermal Evaporation pressing die set for making

pressing die set for making a 6 mm diameter sample pellet

Conductivity type                                               P type

Overall Length: 85 mm

Conductor type:               S-C-P

Whole set  pressing die includes One 0

LaAlO3,(100) orn. 1"x 1" x 0.5mm substrate, 1 side epi polished - LAOa252505S1 Thermal Evaporation pressing die set for makingLaAlO3 single crystal provides a good lattice match to many materials with perovskite structure. It is an excellent substrate for the epitaxial growth of high Tc superconductors and magnetic and ferroelectric thin films. The dielectric properties of LaAlO3 crystal are well suitable for low loss microwave and dielectric resonance applications. Substrate Specifications: Wafer Size: 1'' x 1'' x 0. 5 mm thickness + 0. 05 mm, Wafer Orientation: (100) + 0.