GaN Template on Sapphire(0001) 2"x 0.5mm,1sp ,GaN Film: 20um ,Semi-insulated--Research Grade CIP

GaN Template on Sapphire(0001) 2"x 0.5mm,1sp ,GaN Film: 20um ,Semi-insulated--Research Grade CIPGaN Template on saphhire is made by a hydride vapor phase epitaxy (HVPE) based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. GaN template is a cost effective way to replace GaN single crystal substrate. Specifications Research Grade Sizes 2 Round Dimensions 50mm + 2mm Substrate Sapphire, Orientation c axis (0001) + 1. 0 o Conduction Type: n type, Resistivity > 1E6 Ohm cm Front

Model Number EQ-Die-28D-B Maximum Load 30 metric Ton (at room temperature)

25micron) 1 pc

Resistivity:                  >50  Ohms/cm (If you would like to measure the resistivity accurately

Thin Film from A-Z

or polishing pad

Package:                               under 1000 class clean room

and milling sintered ceramic samples up to 0

It can provide isostatic hydraulic pressure up to 330 MPa to study SSB properties vs

4 pcs per pack

Three ranges of Max

50ml Stainless Steel mixing container for Bench-top V-Shape Ball Grinding & Mixing Machine MSK-SFM-11

Dielectric constants