E01600 - SEMI E16 - マスフローコントローラ漏洩率の決定および記述のガイド StdVol-Automation Technology This Test Method is especially

This Test Method is especially applicable for silicon where boron is an unintentional p-type contaminant at trace levels (<5 × 1014 atoms/cm3)

This Specification describes the volume within any process or cassette module which shall be accessible to the transport module end effector in a cluster tool

The surface characterization tests to be performed are specified herein

and applied voltage together with the breakdown voltage of a mercury silicon contact

This Practice is intended for use with all silicon wafer sizes and types when measuring uniformity of film properties and characteristics

E01600 - SEMI E16 - マスフローコントローラ漏洩率の決定および記述のガイド StdVol-Automation Technology This Test Method is especiallyglobal Gases Committee2011513global Audits and Reviews Subcommittee20116www. semiviews. org www. semi. org1990200411 (MFCs) Referenced SEMI Standards None.